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TC4423M/TC4424M/TC4425M
3A Dual High-Speed Power MOSFET Drivers
Features
* High Peak Output Current: 3A * Wide Input Supply Voltage Operating Range: - 4.5V to 18V * High Capacitive Load Drive Capability: - 1800 pF in 25 ns * Short Delay Times: <40 ns (typ) * Matched Rise/Fall Times * Low Supply Current: - With Logic `1' Input - 3.5 mA (Max) - With Logic `0' Input - 350 A (Max) * Low Output Impedance: 3.5 (typ) * Latch-Up Protected: Will Withstand 1.5A Reverse Current * Logic Input: Will Withstand Negative Swing Up To 5V * ESD Protected: 4 kV * Pin-compatible with the TC4426M/TC4427M/ TC4428M and TC4426AM/TC4427AM/ TC4428AM devices * Wide Operating Temperature Range: - -55C to +125C * See TC4423/TC4424/TC4425 Data Sheet (DS21421) for additional temperature range and packaging offerings
General Description
The TC4423M/TC4424M/TC4425M devices are a family of 3A, dual output buffers/MOSFET drivers. Pincompatible with both the TC4426M/TC4427M/ TC4428M and TC4426AM/4427AM/4428AM families (dual 1.5A drivers), the TC4423M/TC4424M/TC4425M family has an increased latch-up current rating of 1.5A, making them even more robust for operation in harsh electrical environments. As MOSFET drivers, the TC4423M/TC4424M/ TC4425M can easily charge 1800 pF gate capacitance in under 35 nsec, while providing low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. The TC4423M/TC4424M/TC4425M inputs may be driven directly from either TTL or CMOS (2.4V to 18V). In addition, 300 mV of hysteresis is built-in to provide noise immunity and to allow the device to be driven from slowly rising or falling waveforms.
Package Types
8-Pin CERDIP TC4423M TC4424M TC4425M
IN A 2 GND 3 IN B 4
TC4423M TC4424M TC4425M
NC 1
8 7 6 5
NC OUT A VDD OUT B
NC OUT A VDD OUT B
NC OUT A VDD OUT B
Applications
* Switch-mode Power Supplies * Pulse Transformer Drive * Line Drivers
(c) 2005 Microchip Technology Inc.
DS21937A-page 1
TC4423M/TC4424M/TC4425M
Functional Block Diagram
Inverting
300 mV Output VDD
Input Effective Input C = 20 pF (Each Input) GND(1) Note 1: Unused inputs should be grounded. 4.7V
Non-inverting
TC4423M Dual Inverting TC4424M Dual Non-inverting TC4425M One Inverting, One Non-inverting
DS21937A-page 2
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
1.0 ELECTRICAL CHARACTERISTICS
Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
Supply Voltage ................................................................+22V Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND - 5V)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25C, with 4.5V VDD 18V. Parameters Input Logic `1', High Input Voltage Logic `0', Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current Note 1: IS -- -- 1.5 0.15 2.5 0.25 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) tR tF tD1 tD2 -- -- -- -- 23 25 33 38 35 35 75 75 ns ns ns ns Figure 4-1, Figure 4-2, CL = 1800 pF Figure 4-1, Figure 4-2, CL = 1800 pF Figure 4-1, Figure 4-2, CL = 1800 pF Figure 4-1, Figure 4-2, CL = 1800 pF VOH VOL ROH ROL IPK IREV VDD - 0.025 -- -- -- -- -- -- -- 2.8 3.5 3 >1.5 -- 0.025 5 5 -- -- V V A A Duty cycle 2%, t 300 sec. IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VIH VIL IIN 2.4 -- -1 -- -- -- -- 0.8 1 V V A 0V VIN VDD Sym Min Typ Max Units Conditions
Switching times ensured by design.
(c) 2005 Microchip Technology Inc.
DS21937A-page 3
TC4423M/TC4424M/TC4425M
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD 18V. Parameters Input Logic `1', High Input Voltage Logic `0', Low Input Voltage Input Current Output High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current Switching Time (Note 1) Rise Time Fall Time Delay Time Delay Time Power Supply Power Supply Current IS -- -- 2.0 0.2 3.5 0.3 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) tR tF tD1 tD2 -- -- -- -- 28 32 32 38 60 60 100 100 ns ns ns ns Figure 4-1, Figure 4-2, CL = 1800 pF Figure 4-1, Figure 4-2, CL = 1800 pF Figure 4-1, Figure 4-2, CL = 1800 pF Figure 4-1, Figure 4-2, CL = 1800 pF VOH VOL ROH ROL IPK IREV VDD - 0.025 -- -- -- -- -- -- -- 3.7 4.3 3.0 >1.5 -- 0.025 8 8 -- -- V V A A Duty cycle 2%, t 300 sec IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VIH VIL IIN 2.4 -- -10 -- -- -- -- 0.8 +10 V V A 0V VIN VDD Sym Min Typ Max Units Conditions
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Temperature Ranges Specified Temperature Range (M) Maximum Junction Temperature Storage Temperature Range Package Thermal Resistances Thermal Resistance, 8L-CERDIP JA -- 150 -- C/W TA TJ TA -55 -- -65 -- -- -- +125 +150 +150 C C C Sym Min Typ Max Units Conditions
DS21937A-page 4
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
4700 pF
80
100
4700 pF
80
tFALL (nsec)
tRISE (nsec)
60
3300 pF 2200 pF
60
3300 pF 2200 pF
40
40
20
470 pF
0
1500 pF 1000 pF
20
470 pF
0
1500 pF 1000 pF
4
6
8
10 12 VDD (V)
14
16
18
4
6
8
10 12 VDD (V)
14
16
18
FIGURE 2-1: Voltage.
100
Rise Time vs. Supply
FIGURE 2-4: Voltage.
100
Fall Time vs. Supply
5V 80
tFALL (nsec) tRISE (nsec)
80
5V
60
10V 15V
60
10V 15V
40
40
20
20
0 100
1000
CLOAD (pF)
10,000
0 100
1000 CLOAD (pF)
10,000
FIGURE 2-2: Load.
32 30 28
TIME (nsec)
Rise Time vs. Capacitive
FIGURE 2-5: Load.
100
Fall Time vs. Capacitive
CLOAD = 2200 pF
tFALL
DELAY TIME (nsec)
80
CLOAD = 2200 pF VDD = 10V
tD1
26 24 22 20 18 -55
tFALL
tRISE
60
tRISE
40
20
tD2
-35
-15
5
25 45 TA (C)
65
85
105 125
0
1
2
3
4
567 INPUT (V)
8
9
10 11 12
FIGURE 2-3: Temperature.
Rise and Fall Times vs.
FIGURE 2-6: Amplitude.
Propagation Delay vs. Input
(c) 2005 Microchip Technology Inc.
DS21937A-page 5
TC4423M/TC4424M/TC4425M
Typical Performance Curves (Continued)
50
CLOAD = 2200 pF
50
CLOAD = 2200 pF
45
45
DELAY TIME (nsec)
DELAY TIME (nsec)
tD2
40 35 30 25 20 4 6 8 10 12 VDD (V) 14 16 18
tD2 tD1
40 35 30 25 20 -55
tD1
-35
-15
5
25 45 TA (C)
65
85
105 125
FIGURE 2-7: Supply Voltage.
TA = 25C
Propagation Delay Time vs.
FIGURE 2-10: Temperature.
1.4
Propagation Delay Time vs.
1
BOTH INPUTS = 1
1.2
IQUIESCENT (mA)
IQUIESCENT (mA)
1.0 0.8 0.6 0.4 0.2 BOTH INPUTS = 0 -35 -15 5 25 45 TA (C) 65 85 105 125
BOTH INPUTS = 1
0.1
BOTH INPUTS = 0
0.01 4 6 8 10 12 VDD (V) 14 16 18
0.0 -55
FIGURE 2-8: Supply Voltage.
14 12 10 8 6 4 2 4 6 8
Quiescent Current vs.
FIGURE 2-11: Temperature.
14 12
Quiescent Current vs.
WORST CASE @ TJ = +150C
RDS(ON) ()
RDS(ON) ()
10 8 6 4 2
WORST CASE @ TJ = +150C
TYP @ TA = +25C
TYP @ TA = +25C
10 12 VDD (V)
14
16
18
4
6
8
10 12 VDD (V)
14
16
18
FIGURE 2-9: Output Resistance (Output High) vs. Supply Voltage.
FIGURE 2-12: Output Resistance (Output Low) vs. Supply Voltage.
DS21937A-page 6
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
Typical Performance Curves (Continued)
Note: Load on single output only
60
VDD = 18V
60
VDD = 18V
3300 pF 1000 pF
50 634 kHz 40 30 355 kHz 20 200 kHz 10 112.5 kHz 0 100 63.4 kHz 35.5 kHz 20 kHz 1000 CLOAD (pF) 10,000
50 40 30 20 10 0
ISUPPLY (mA)
ISUPPLY (mA)
10,000 pF 100 pF
10
100 FREQUENCY (kHz)
1000
FIGURE 2-13: Capacitive Load.
90 80 70
ISUPPLY (mA)
Supply Current vs.
FIGURE 2-16: Frequency.
90
Supply Current vs.
VDD = 12V
80 70
VDD = 12V
3300 pF 1000 pF
2 MHz
ISUPPLY (mA)
60 50 1.125 MHz 40 30 20 10 0 100 1000 CLOAD (pF) 634 kHz 355 kHz 200 kHz 112.5 kHz 63.4 kHz 20 kHz 10,000
60 50 40 30 20 10 0 10 100 FREQUENCY (kHz) 1000 10,000 pF 100 pF
FIGURE 2-14: Capacitive Load.
120
VDD = 6V
Supply Current vs.
FIGURE 2-17: Frequency.
120
VDD = 6V
Supply Current vs.
4700 pF 10,000 pF
100 80 1.125 MHz 60 3.55 MHz 40 2 MHz 20 0 100 634 kHz 355 kHz
100 80
ISUPPLY (mA)
ISUPPLY (mA)
2200 pF 60 1000 pF 40 20 100 pF
112.5 kHz 20 kHz 1000 CLOAD (pF) 10,000
0 10
100 FREQUENCY (kHz)
1000
FIGURE 2-15: Capacitive Load.
Supply Current vs.
FIGURE 2-18: Frequency.
Supply Current vs.
(c) 2005 Microchip Technology Inc.
DS21937A-page 7
TC4423M/TC4424M/TC4425M
Typical Performance Curves (Continued)
10-7 8 6 4 2 A * sec 10-8 8 6 4 2 10-9 0 2 4 6 8 10 12 14 16 18
VIN (V)
Note:
The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4.
FIGURE 2-19: Energy.
TC4423M Crossover
DS21937A-page 8
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
3.0 PIN DESCRIPTIONS
3.4 Output A (OUT A)
The descriptions of the pins are listed in Table 3-1. OUT A is a CMOS, push-pull output that is capable of sourcing and sinking 3A peaks of current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 1.5A.
TABLE 3-1:
8-Pin CERDIP 1 2 3 4 5 6 7 8
PIN FUNCTION TABLE
Description No connection Input A Ground Input B Output B Supply input Output A No connection
Symbol NC IN A GND IN B OUT B VDD OUT A NC
3.5
Supply Input (VDD)
VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local ceramic capacitor. This bypass capacitor provides a localized lowimpedance path for the peak currents that are to be provided to the load.
3.6
Ground (GND)
3.1
Input A (IN A)
IN A is a TTL/CMOS-compatible input that controls OUT A. This input has 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals, as well as providing noise immunity.
GND is the device return pin. The ground pin(s) should have a low-impedance connection to the bias supply source return. High peak currents will flow out the ground pin(s) when the capacitive load is being discharged.
3.2
Input B (IN B)
IN B is a TTL/CMOS-compatible input that controls OUT B. This input has 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals, as well as providing noise immunity.
3.3
Output B (OUT B)
OUT B is a CMOS push-pull output that is capable of sourcing and sinking 3A peaks of current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 1.5A.
(c) 2005 Microchip Technology Inc.
DS21937A-page 9
TC4423M/TC4424M/TC4425M
4.0 APPLICATIONS INFORMATION
VDD = 16V 1 F WIMA MKS-2 Input 1 2 TC4423M (1/2 TC4425M) 0.1 F Ceramic Output CL = 1800 pF Input 1 2 TC4424M (1/2 TC4425M) VDD = 16V 1 F WIMA MKS-2 0.1 F Ceramic Output CL = 1800 pF
Input: 100 kHz, square wave, tRISE = tFALL 10 ns +5V Input 0V 16V Output 0V 10% 10% 10% tD1 90% tF tD2 0V tR 90% 16V Output 0V 90% +5V Input 10%
Input: 100 kHz, square wave, tRISE = tFALL 10 ns 90%
tD1 90% 10%
tR
tD2
90% tF 10%
FIGURE 4-1: Time.
Inverting Driver Switching
FIGURE 4-2: Switching Time.
Non-inverting Driver
DS21937A-page 10
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
8-Lead CERDIP (300 mil) Example:
XXXXXXXX XXXXXNNN YYWW
TC4424 e3 MJA^^ 256 0543
Legend: XX...X Y YY WW NNN
e3
*
Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package.
Note:
In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.
(c) 2005 Microchip Technology Inc.
DS21937A-page 11
TC4423M/TC4424M/TC4425M
8-Lead Ceramic Dual In-line - 300 mil (CERDIP)
E1
2 n 1 D E A2 A
c eB A1 B1 B p
L
Number of Pins Pitch Top to Seating Plane Standoff Shoulder to Shoulder Width Ceramic Pkg. Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing *Controlling Parameter JEDEC Equivalent: MS-030
Drawing No. C04-010
Units Dimension Limits n p A A1 E E1 D L c B1 B eB
MIN
.160 .020 .290 .230 .370 .125 .008 .045 .016 .320
INCHES* NOM 8 .100 .180 .030 .305 .265 .385 .163 .012 .055 .018 .360
MAX
MIN
.200 .040 .320 .300 .400 .200 .015 .065 .020 .400
MILLIMETERS NOM 8 2.54 4.06 4.57 0.51 0.77 7.37 7.75 5.84 6.73 9.40 9.78 3.18 4.13 0.20 0.29 1.14 1.40 0.41 0.46 8.13 9.15
MAX
5.08 1.02 8.13 7.62 10.16 5.08 0.38 1.65 0.51 10.16
DS21937A-page 12
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
APPENDIX A: REVISION HISTORY
Revision A (March 2005)
* Original Release of this Document.
(c) 2005 Microchip Technology Inc.
DS21937A-page 13
TC4423M/TC4424M/TC4425M
NOTES:
DS21937A-page 14
(c) 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device and Temperature Range XX Package Examples:
a) TC4423MJA: 3A Dual MOSFET Driver, Inverting, -55C to +125C 8LD CERDIP package. 3A Dual MOSFET Driver, Non-Inverting, -55C to +125C 8LD CERDIP package. 3A Dual MOSFET Driver, Complementary, -55C to +125C 8LD CERDIP package.
Device:
TC4423M: 3A Dual MOSFET Driver, Inverting, -55C to +125C TC4424M: 3A Dual MOSFET Driver, Non-Inverting, -55C to +125C TC4425M: 3A Dual MOSFET Driver, Complementary, -55C to +125C
a)
TC4424MJA:
a)
TC4425MJA:
Package:
JA = Ceramic DIP, (300 mil body), 8-lead
(c) 2005 Microchip Technology Inc.
DS21937A-page 15
TC4423M/TC4424M/TC4425M
NOTES:
DS21937A-page 16
(c) 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable."
*
* *
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company's quality system processes and procedures are for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified.
(c) 2005 Microchip Technology Inc.
DS21937A-page 17
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Alpharetta, GA Tel: 770-640-0034 Fax: 770-640-0307 Boston Westford, MA Tel: 978-692-3848 Fax: 978-692-3821 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 San Jose Mountain View, CA Tel: 650-215-1444 Fax: 650-961-0286 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
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ASIA/PACIFIC
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EUROPE
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10/20/04
DS21937A-page 18
(c) 2005 Microchip Technology Inc.

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